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Journal Articles

Suppression of vacancy formation and hydrogen isotope retention in irradiated tungsten by addition of chromium

Wang, J.*; Hatano, Yuji*; Toyama, Takeshi*; Suzudo, Tomoaki; Hinoki, Tatsuya*; Alimov, V. Kh.*; Schwarz-Selinger, T.*

Journal of Nuclear Materials, 559, p.153449_1 - 153449_7, 2022/02

https://doi.org/10.1016/j.jnucmat.2021.153449
 Times Cited Count：3 Percentile：68.71(Materials Science, Multidisciplinary)

To study the effect of the content of chromium (Cr) in the tungsten (W) matrix on the vacancy formation and retention of hydrogen isotopes, the samples of the W-0.3Cr alloy were irradiated with 6.4 MeV Fe ions in the temperature range of 523-1273 K. These displacement-damaged samples were exposed to D$$_{2}$$ gas at a temperature of 673 K. The addition of 0.3% Cr into the W matrix resulted in a significant decrease in the retention of deuterium compared to pure W after irradiation especially at high temperature. Positron lifetime for W-0.3Cr alloy irradiated at 1073 K was almost similar to that for non-irradiated one. These facts indicate the suppression of the formation of vacancy-type defects by 0.3% Cr addition.

Journal Articles

High flux pinning efficiency by columnar defects dispersed in three directions in YBCO thin films

Sueyoshi, Tetsuro*; Nishimura, Takahiro*; Fujiyoshi, Takanori*; Mitsugi, Fumiaki*; Ikegami, Tomoaki*; Ishikawa, Norito

Superconductor Science and Technology, 29(10), p.105006_1 - 105006_7, 2016/10

https://doi.org/10.1088/0953-2048/29/10/105006
 Times Cited Count：8 Percentile：37.83(Physics, Applied)

A systematic investigation of flux pinning by widely direction-dispersed columnar defects (CDs) in YBa$$_{2}$$Cu$$_{3}$$Oy thin films was carried out by using heavy-ion irradiation: a parallel configuration of CDs aligned along the $$c$$-axis, and two trimodal splay configurations composed of crossing CDs; relative to the $$c$$-axis, where the splay plane defined by the three irradiation angles is perpendicular (trimodal-A) or parallel (trimodal-B) to the transport current direction. The trimodal configurations show high pinning efficiency over a wide range of magnetic field orientations compared to the parallel one at low magnetic field. In particular, trimodal-B shows the higher critical current density of the two trimodal configurations.

Journal Articles

Defects in GaAs solar cells with InAs quantum dots created by proton irradiation

Sato, Shinichiro; Schmieder, K. J.*; Hubbard, S. M.*; Forbes, D. V.*; Warner, J. H.*; Oshima, Takeshi; Walters, R. J.*

Proceedings of 42nd IEEE Photovoltaic Specialists Conference (PVSC-42) (CD-ROM), 5 Pages, 2015/06

https://doi.org/10.1109/PVSC.2015.7355868

GaAs pn-junction diodes with embedded InAs quantum dots (QDs) are irradiated with protons and the generated deep level traps are investigated using Deep Level Transient Spectroscopy (DLTS). The results are compared to GaAs pn-junction diodes without QDs in order to identify the origin of the deep level traps. The fluence dependence of trap density is investigated, and it is shown that majority carrier traps induced by irradiation increase in proportion to the fluence whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. In addition, minority carrier traps in the QD layer and electron/hole emission from QD levels are investigated by various reverse bias and pulse voltage conditions.

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

https://doi.org/10.1016/j.nimb.2014.12.064
 Times Cited Count：7 Percentile：51.25(Instruments & Instrumentation)

Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04

https://doi.org/10.1016/j.physb.2005.12.088
 Times Cited Count：8 Percentile：38.44(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Native and radiation induced defects in lattice mismatched InGaAs and InGaP

Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.

Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00

no abstracts in English

Journal Articles

EPR and theoretical studies of positively charged carbon vacancy in 4$$H$$-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; De$'a$k, P.*; Son, N. T.*; Janz$'e$n, E.*

Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12

https://doi.org/10.1103/PhysRevB.70.235212
 Times Cited Count：44 Percentile：83.59(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Journal Articles

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08

https://doi.org/10.1063/1.1384855
 Times Cited Count：56 Percentile：86.43(Physics, Applied)

1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.

Journal Articles

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

JAEA Reports

None

*; *; *; *; Hasegawa, Makoto; Hirano, Koichiro

JNC TY9400 2000-007, 50 Pages, 2000/03

JNC-TY9400-2000-007.pdf:1.29MB

no abstracts in English

Journal Articles

Tritium inventory estimation in solid blanket system

Nishikawa, Masabumi*; Baba, Atsushi*; *; Kawamura, Yoshinori

Fusion Engineering and Design, 39-40, p.615 - 625, 1998/00

https://doi.org/10.1016/S0920-3796(97)00197-X
 Times Cited Count：14 Percentile：73.06(Nuclear Science & Technology)

no abstracts in English

Journal Articles

ESR studies of defects in P-type 6H-SiC irradiated with 3MeV-electrons

D.Cha*; Ito, Hisayoshi; Morishita, Norio; Kawasuso, Atsuo; Oshima, Takeshi; ; J.Ko*; K.Lee*; Nashiyama, Isamu

Mater. Sci. Forum, 264-268, p.615 - 618, 1998/00

no abstracts in English

Journal Articles

Depth profiles of defects in Ar-ion-irradiated steels determined by a least-squares fit of S parameters from variable-energy positron annihilation

; *; *; Ito, Yasuo*

Applied Surface Science, 85(2), p.229 - 238, 1995/01

https://doi.org/10.1016/0169-4332(94)00336-X
 Times Cited Count：11 Percentile：57.88(Chemistry, Physical)

no abstracts in English

Journal Articles

Enhancement of the transport critical current density by electron irradiation in a Bi$$_{1.5}$$Pb$$_{0.5}$$Sr$$_{2}$$Ca$$_{2}$$Cu$$_{3}$$O$$_{x}$$ ceramic

Shiraishi, Kensuke; *; *; *

Japanese Journal of Applied Physics, 31(12A), p.L1675 - L1678, 1992/12

https://doi.org/10.1143/JJAP.31.L1675
 Times Cited Count：0 Percentile：0(Physics, Applied)

no abstracts in English

Journal Articles

Depth profiles of defects in C-ion-irradiated steel determined by a least-squares fit of S parameters from variable-energy positron annihilation

; Takamura, Saburo; *; *

Physical Review B, 46(22), p.14411 - 14418, 1992/12

https://doi.org/10.1103/PhysRevB.46.14411
 Times Cited Count：6 Percentile：39.36(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Electron irradiation effects on the transport critical current density in a Bi$$_{1.5}$$Pb$$_{0.5}$$Sr$$_{2}$$Ca$$_{2}$$Cu$$_{3}$$O$$_{x}$$ ceramic

*; *; *; *

Japanese Journal of Applied Physics, 31(8A), p.L1037 - L1040, 1992/08

https://doi.org/10.1143/JJAP.31.L1037
 Times Cited Count：5 Percentile：32.82(Physics, Applied)

no abstracts in English

Journal Articles

Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; *; Okumura, Hajime*; Yoshida, Sadafumi*

J. Electron. Mater., 21(7), p.707 - 710, 1992/00

https://doi.org/10.1007/BF02655600
 Times Cited Count：67 Percentile：94.38(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Electron-irradiation enhancement of the critical magnetization current in the Bi$$_{1.4}$$Pb$$_{0.6}$$Sr$$_{2}$$Ca$$_{2}$$Cu$$_{3}$$O$$_{10}$$ superconductor

Shiraishi, Kensuke; ; *

Japanese Journal of Applied Physics, 30(4A), p.L578 - L581, 1991/04

https://doi.org/10.1143/JJAP.30.L578
 Times Cited Count：6 Percentile：38.71(Physics, Applied)

no abstracts in English

Journal Articles

Microstructure in electron irradiated Ba$$_{2}$$YCu$$_{3}$$O$$_{7}$$ superconducters

Shiraishi, Kensuke;

High Temperature Superconductors, p.325 - 332, 1991/00

no abstracts in English

34 (Records 1-20 displayed on this page)